• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
搜索

Author:

Li Fei (Li Fei.) | Zhang Xiao-Ling (Zhang Xiao-Ling.) | Duan Yi (Duan Yi.) | Xie Xue-Song (Xie Xue-Song.) | Lue Chang-Zhi (Lue Chang-Zhi.)

Indexed by:

SCIE CSCD

Abstract:

Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I-V-T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density.

Keyword:

Schottky barrier height ideality factor Schottky diodes reverse current

Author Community:

  • [ 1 ] [Li Fei]Beijing Univ Technol, Dept Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang Xiao-Ling]Beijing Univ Technol, Dept Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Duan Yi]Beijing Univ Technol, Dept Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Xie Xue-Song]Beijing Univ Technol, Dept Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Lue Chang-Zhi]Beijing Univ Technol, Dept Elect Informat & Control Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Li Fei]Beijing Univ Technol, Dept Elect Informat & Control Engn, Beijing 100124, Peoples R China

Email:

Show more details

Related Keywords:

Source :

CHINESE PHYSICS B

ISSN: 1674-1056

Year: 2009

Issue: 11

Volume: 18

Page: 5029-5033

1 . 7 0 0

JCR@2022

ESI Discipline: PHYSICS;

JCR Journal Grade:2

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 8

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

Online/Total:350/5476290
Address:BJUT Library(100 Pingleyuan,Chaoyang District,Beijing 100124, China Post Code:100124) Contact Us:010-67392185
Copyright:BJUT Library Technical Support:Beijing Aegean Software Co., Ltd.