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作者:

You, J. B. (You, J. B..) | Zhang, X. W. (Zhang, X. W..) | Dong, J. J. (Dong, J. J..) | Song, X. M. (Song, X. M..) | Yin, Z. G. (Yin, Z. G..) | Chen, N. F. (Chen, N. F..) | Yan, H. (Yan, H..)

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EI Scopus SCIE

摘要:

The Pt nanoparticles (NPs), which posses the wider tunable localized-surface-plasmon (LSP) energy varying from deep ultraviolet to visible region depending on their morphology, were prepared by annealing Pt thin films with different initial mass-thicknesses. A sixfold enhancement of the 357 nm forward emission of ZnMgO was observed after capping with Pt NPs, which is due to the resonance coupling between the LSP of Pt NPs and the band-gap emission of ZnMgO. The other factors affecting the ultraviolet emission of ZnMgO, such as emission from Pt itself and light multi-scattering at the interface, were also discussed. These results indicate that Pt NPs can be used to enhance the ultraviolet emission through the LSP coupling for various wide band-gap semiconductors.

关键词:

Localized surface plasmon Nanoparticles Photoluminescence ZnMgO films

作者机构:

  • [ 1 ] [You, J. B.]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 2 ] [Zhang, X. W.]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 3 ] [Dong, J. J.]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 4 ] [Yin, Z. G.]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 5 ] [Chen, N. F.]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 6 ] [Song, X. M.]Beijing Univ Technol, Lab Thin Film Mat, Coll Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 7 ] [Yan, H.]Beijing Univ Technol, Lab Thin Film Mat, Coll Mat Sci & Engn, Beijing 100022, Peoples R China

通讯作者信息:

  • [Zhang, X. W.]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

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来源 :

NANOSCALE RESEARCH LETTERS

ISSN: 1931-7573

年份: 2009

期: 10

卷: 4

页码: 1121-1125

ESI学科: PHYSICS;

JCR分区:1

中科院分区:1

被引次数:

WoS核心集被引频次: 27

SCOPUS被引频次: 29

ESI高被引论文在榜: 0 展开所有

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