A　device　structure　of　resonant　cavity　light　emitting　diodes　(RCLED)　at　650nm　wavelength　was　proposed　by　using　AlGaAs　as　the　n-type　bottom　DBR,　AlGaInP　as　the　p-type　top　DBR,　and　GaInP/AlGaInP　MQW　as　the　active　region.　The　device　was　designed　according　to　the　transfer　matrix　method,　and　both　RCLED　and　normal　LED　were　fabricated　for　comparison.　Results　showed　that　the　efficiency　of　RCLED　is　30%　higher　than　the　normal　LED,　and　the　peak　wavelength　of　RCLED　changed　only　1　nm　when　the　driving　current　increased　from　3　mA　to　30　mA,　compared　with　that　of　7　nm　for　the　normal　LED.　Meanwhile,　RCLED　has　a　narrower　spectrum　and　a　smaller　far　field　divergence　angle.