Synthesis and characterization of phase change memory cells - 文章详情页

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摘要：

Phase　change　memory　(PCM)　cells　based　on　Ge2Sb2Te5　were　synthesized　and　investigated.　Current-voltage　measurements　demonstrated　different　final　resistances.　Transmission　electron　microscopy　(TEM),　high　resolution　electron　microscopy　(HREM)　and　the　energy　dispersive　X-ray　spectroscopy　(EDS)　analyses　were　used　to　characterize　the　microstructures　of　the　PCM　cells.　The　architectures,　structures　and　defects　in　the　cells　including　the　deposited　elemental　distributions　and　the　interfacial　structures　between　electrodes　and　barrier　layers　were　studied　in　detail.

关键词：

electron microscopy microstructure multilayer structure

作者机构：

[ 1 ] [Wang Ke]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
[ 2 ] [Han XiaoDong]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
[ 3 ] [Zhang Ze]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
[ 4 ] [Wu LiangCai]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
[ 5 ] [Liu Bo]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
[ 6 ] [Song ZhiTang]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
[ 7 ] [Feng SongLin]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China

通讯作者信息：

韩晓东
[Han XiaoDong]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China

电子邮件地址：

xdhan@bjut.edu.cn

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