In　order　to　obtain　higher　light　output　power,　the　flip-chip　structure　is　used.　We　studied　the　ratio　of　the　light　of　GaN　sides　before　and　after　fabricating　metal　reflector　on　p-GaN.　The　SiO2/SiN　(x)　dielectric　film　reflectors　were　deposited　through　plasma　enhance　chemical　vapor　deposition　following　the　fabrication　of　metal　reflector,　and　then　the　dielectric　film　reflectors　on　the　electrodes　were　etched　in　order　to　expose　the　electrodes　to　the　air.　It　is　found　that　comparing　with　the　flip-chip　GaN-LED　without　dielectric　film　reflectors,　light　output　power　can　be　increased　by　as　high　as　10.2%　after　the　deposition　of　2　pairs　of　SiO2/SiN　(x)　dielectric　film　reflectors　on　GaN-LEDs,　which　cover　the　sidewalls　and　the　areas　without　the　metal　reflector.　This　result　indicates　that　the　high　reflector　formed　by　multi-layer　dielectric　films　is　useful　to　enhance　the　light　output　power　of　GaN-based　LED,　which　reflects　light　from　step　sidewalls　and　p-GaN　without　metal　reflector　to　internal,　and　then　light　emits　from　the　surface.