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摘要：
A single crystalline Mg2Si film was formed by solid phase reaction (SPR) of a Si(111) substrate with an Mg overlayer capped with an oxide layer(s), which was enhanced by post annealing from room temperature to 100 degrees C in a molecular beam epitaxy (MBE) system. The thermal stability of the Mg2Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300 degrees C, 450 degrees C and 650 degrees C, respectively. The Mg2Si film stayed stable until the annealing temperature reached 450 degrees C then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg.
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来源 ：
CHINESE PHYSICS B
ISSN： 1674-1056
年份： 2009
期： 7
卷： 18
页码： 3079-3083
1 . 7 0 0
JCR@2022
ESI学科： PHYSICS;
JCR分区：2
中科院分区：1
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