Yttrium　barium　copper　oxide　(YBCO)　film　was　synthesized　by　a　metal-organic　deposition　(MOD)　process　with　fluorine-free　Y　and　Cu　precursor.　The　precursor　solution　with　Sm　addition　enabled　further　improvement　of　the　thickness　and　uniformity　of　precursor　films.　The　calcination　and　firing　processes　were　studied,　and　the　precursor　film　was　successfully　converted　to　dense　and　uniform　YBCO　film　on　LaAlO3　(LAO)　substrate　after　annealing　in　a　wet　Ar　and　O-2　atmosphere.　The　measured　critical　current　density　(J(c))　value　was　about　80　A/cm-w　(2.66　MA/cm(2)).　The　trifluoroacetate　(TFA)　reduced　MOD　process　has　the　advantage　that　it　has　a　larger　tolerance　for　variations　in　the　gas　flow　rate　and　path.　The　results　on　a　Sm-YBCO　film　deposited　on　LAO　with　a　(J(c))　buffer　layer　fabricated　by　MOD　are　also　presented.