CeO2　caped　La2Zr2O7　buffer　layers　on　cube-　textured　Ni5W　substrates　were　fabricated　by　the　method　of　chemical　solution　deposition(CSD).　The　orientation　of　both　LZO　film　and　CeO2/LZO　buffer　layer　was　investigated　using　conventional　XRD　and　X-ray　four　circle　diffractometers,　respectively.　The　results　reveal　that　both　the　LZO　film　on　Ni5W　substrates　and　CeO2　film　on　LZO　buffer　layer　are　grown　epitaxially.　The　value　of　Full　Width　at　Half　Maximum　(FWHM)　of　(111)　Phi　scan　of　CeO2/LZO　buffer　layer　is　around　8　degrees,　and　the　FWHM　of　(200)　omega-scan　of　CeO2/La2Zr2O7　buffer　layer　is　6.5　degrees,　indicating　a　good　in-　plan　orientation　of　the　as　obtained　buffer　layers.　It　was　observed　by　the　high　resolution　SEM　that　the　surface　of　LZO　buffer　layer　is　crack-　free　and　very　dense.　The　surface　result　observed　by　AFM　indicates　a　very　smooth　CeO2　surface　with　5.9　nm　of　the　root　mean　square　roughness　measured　in　an　areas　of　30　X　30　mu　m(2).　AES　depth　profile　results　of　CeO2/LZO　buffer　layers　shows　that　the　deposited　LZO　film　could　effectively　prevent　the　diffusion　of　Ni　into　the　buffer　layer.