[FeNi(3　nm)/Zn1-xCoxO(3　nm)](2)/ZnO(d　nm)/[Zn1-xCoxO(3　nm)/Co(3　nm)](2)　(d=3　and　10)　semiconductor　junctions　were　prepared　by　magnetron　sputtering　system　and　photolithography.　The　spin　valve　effect　was　observed　in　these　junctions　because　the　utility　of　the　ferromagnetic　composite　layers　acted　as　soft　and　hard　magnetic　layers.　The　electrical　detection　was　performed　by　measuring　the　magnetoresistance　of　these　junctions　to　investigate　the　current　spin　polarization　alpha(sc)　in　the　ZnO　layer　and　the　spin　injection　efficiency　eta　of　spin-polarized　electrons.　alpha(sc)　was　reduced　from　11.7%　(and　10.5%)　at　90　K　to　7.31%　(and　5.93%)　at　room　temperature　for　d=3　(and　d=10).　And　eta　was　reduced　from　39.5%　(and　35.5%)　at　90　K　to　24.7%　(and　20.0%)　at　room　temperature　for　d=3　(and　d=10).