GaN　layer　on　c-plane　misoriented　sapphire,　grown　by　metal　organic　chemical　vapor　deposition,　has　been　studied.　It　was　observed　that　the　random　and　non-uniform　distribution　of　the　step　was　caused　by　the　step　reconstruction　for　GaN　grown　on　08　sapphire　by　atomic　force　microscopy.　The　image　quality　parameter　analysis　of　electron　back-scatter　diffraction　indicated　that　the　strains　were　reduced　for　GaN　grown　on　0.28　and　0.38　sapphire,　and　optical　and　electrical　properties　were　improved.　The　electroluminescence　intensity　of　LED　grown　on　0.28　and　0.38　sapphire　was　2　times　as　that　of　08　sapphire.　(C)　2009　Elsevier　B.V.　All　rights　reserved.