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作者:

Li, J. Y. (Li, J. Y..) | Li, H. (Li, H..)

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EI Scopus SCIE

摘要:

Physical and electrical properties of wurtzitic ZnO straight nanowires grown via a vapor-solid mechanism were investigated. Raman spectrum shows four first-order phonon frequencies and a second-order Raman frequency of the ZnO nanowires. Electrical and photoconductive performance of individual ZnO straight nanowire devices was studied. The results indicate that the nanowires reported here are n-type semi-conductors and UV light sensitive, and a desirable candidate for fabricating UV light nanosensors and other applications.

关键词:

Nanosensors Nanostructures ZnO

作者机构:

  • [ 1 ] [Li, J. Y.]Univ Sci & Technol Beijing, Dept Phys Chem, Beijing 100083, Peoples R China
  • [ 2 ] [Li, H.]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing, Peoples R China

通讯作者信息:

  • [Li, J. Y.]Univ Sci & Technol Beijing, Dept Phys Chem, Beijing 100083, Peoples R China

电子邮件地址:

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来源 :

NANOSCALE RESEARCH LETTERS

ISSN: 1556-276X

年份: 2009

期: 2

卷: 4

页码: 165-168

ESI学科: PHYSICS;

JCR分区:1

中科院分区:1

被引次数:

WoS核心集被引频次: 28

SCOPUS被引频次: 29

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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