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摘要:
Physical and electrical properties of wurtzitic ZnO straight nanowires grown via a vapor-solid mechanism were investigated. Raman spectrum shows four first-order phonon frequencies and a second-order Raman frequency of the ZnO nanowires. Electrical and photoconductive performance of individual ZnO straight nanowire devices was studied. The results indicate that the nanowires reported here are n-type semi-conductors and UV light sensitive, and a desirable candidate for fabricating UV light nanosensors and other applications.
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来源 :
NANOSCALE RESEARCH LETTERS
ISSN: 1556-276X
年份: 2009
期: 2
卷: 4
页码: 165-168
ESI学科: PHYSICS;
JCR分区:1
中科院分区:1
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