InGaN/GaN　quantum　wells　have　been　grown　by　metal-organic　chemical　vapor　deposition.　InGaN/GaN　quantum　well　with　n-type　InGaN/GaN　thin　layer　or　InGaN/GaN　superlattice　layer　were　studied.　By　introducing　n-type　InGaN/GaN　thin　layer　or　InGaN/GaN　superlattice　layer,　the　strain　in　quantum　well　active　area　was　released,　the　surface　morphology　was　improved　and　the　density　of　V-type　defect　was　redued.　It　was　also　found　that　the　multiple　quantum　well　photoluminescence　intensity　and　the　radiation　efficiency　of　light　emitting　diodes　were　both　higher　than　that　of　the　structure　without　InGaN/GaN　superlattice　layer.