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Author:

Yuan, H. T. (Yuan, H. T..) | Liu, Y. Z. (Liu, Y. Z..) | Zeng, Z. Q. (Zeng, Z. Q..) | Mei, Z. X. (Mei, Z. X..) | Guo, Y. (Guo, Y..) | Zhang, P. (Zhang, P..) | Du, X. L. (Du, X. L..) (Scholars:杜修力) | Jia, J. F. (Jia, J. F..) (Scholars:贾俊峰) | Zhang, Z. (Zhang, Z..) | Xue, Q. K. (Xue, Q. K..)

Indexed by:

EI Scopus SCIE

Abstract:

Metastable structures of MgO overlayer on type-III oxide surfaces were achieved by molecular beam epitaxy. Periodic out-of-plane dipole moment of substrates was revealed to play a dominant role in the formation of metastable oxide structures. Under near-equilibrium epitaxial conditions, this dipole moment was found to drive the over-grown MgO to inherit the out-of-plane substrate lattice, resulting in some new structures with different stacking sequences and bonding configurations from those of thermodynamically stable phase. As typical cases, by adopting the substrate dipole moment along the growth direction, MgO overlayers with metastable wurtzite (WZ) and stacking-fault (SF) structures were formed on alpha-Al2O3 (0001) and MgAl2O4(111) surfaces, respectively. (c) 2008 Elsevier B.V. All rights reserved.

Keyword:

Interface Metastable structure MgO Phase equilibrium Molecular beam epitaxy Planar defects

Author Community:

  • [ 1 ] [Yuan, H. T.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
  • [ 2 ] [Liu, Y. Z.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
  • [ 3 ] [Zeng, Z. Q.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
  • [ 4 ] [Mei, Z. X.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
  • [ 5 ] [Guo, Y.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
  • [ 6 ] [Du, X. L.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
  • [ 7 ] [Zhang, P.]Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China
  • [ 8 ] [Jia, J. F.]Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
  • [ 9 ] [Zhang, Z.]Beijing Univ Technol, Beijing 100022, Peoples R China

Reprint Author's Address:

  • 杜修力

    [Du, X. L.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China

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Source :

JOURNAL OF CRYSTAL GROWTH

ISSN: 0022-0248

Year: 2009

Issue: 2

Volume: 311

Page: 425-428

1 . 8 0 0

JCR@2022

ESI Discipline: CHEMISTRY;

JCR Journal Grade:2

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 10

SCOPUS Cited Count: 12

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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