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作者:

Yuan, H. T. (Yuan, H. T..) | Liu, Y. Z. (Liu, Y. Z..) | Zeng, Z. Q. (Zeng, Z. Q..) | Mei, Z. X. (Mei, Z. X..) | Guo, Y. (Guo, Y..) | Zhang, P. (Zhang, P..) | Du, X. L. (Du, X. L..) (学者:杜修力) | Jia, J. F. (Jia, J. F..) (学者:贾俊峰) | Zhang, Z. (Zhang, Z..) | Xue, Q. K. (Xue, Q. K..)

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EI Scopus SCIE

摘要:

Metastable structures of MgO overlayer on type-III oxide surfaces were achieved by molecular beam epitaxy. Periodic out-of-plane dipole moment of substrates was revealed to play a dominant role in the formation of metastable oxide structures. Under near-equilibrium epitaxial conditions, this dipole moment was found to drive the over-grown MgO to inherit the out-of-plane substrate lattice, resulting in some new structures with different stacking sequences and bonding configurations from those of thermodynamically stable phase. As typical cases, by adopting the substrate dipole moment along the growth direction, MgO overlayers with metastable wurtzite (WZ) and stacking-fault (SF) structures were formed on alpha-Al2O3 (0001) and MgAl2O4(111) surfaces, respectively. (c) 2008 Elsevier B.V. All rights reserved.

关键词:

Interface Metastable structure MgO Molecular beam epitaxy Phase equilibrium Planar defects

作者机构:

  • [ 1 ] [Yuan, H. T.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
  • [ 2 ] [Liu, Y. Z.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
  • [ 3 ] [Zeng, Z. Q.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
  • [ 4 ] [Mei, Z. X.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
  • [ 5 ] [Guo, Y.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
  • [ 6 ] [Du, X. L.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
  • [ 7 ] [Zhang, P.]Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China
  • [ 8 ] [Jia, J. F.]Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
  • [ 9 ] [Zhang, Z.]Beijing Univ Technol, Beijing 100022, Peoples R China

通讯作者信息:

  • 杜修力

    [Du, X. L.]Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China

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来源 :

JOURNAL OF CRYSTAL GROWTH

ISSN: 0022-0248

年份: 2009

期: 2

卷: 311

页码: 425-428

1 . 8 0 0

JCR@2022

ESI学科: CHEMISTRY;

JCR分区:2

中科院分区:1

被引次数:

WoS核心集被引频次: 9

SCOPUS被引频次: 10

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 2

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