(Ta2O5)(1-x)(TiO2)(x)　system　ceramics　has　been　studied　intensively　as　a　promising　dielectric　material　for　next　generation　of　high　density　dynamic　random　access　memories　instead　of　SiO2　and　Si3N4.　It　is　found　that　the　dielectric　permittivity　of　(Ta2O5)(1-x)(TiO2)(x)　ceramics　was　dependent　of　fabrication　process.　But　in　the　previous　work,　their　calcining　and　sintering　time　were　too　long,　generally　for　24　h　or　even　more.　A　relatively　quick　sintering　process　was　provided　which　calcining　and　sintering　time　can　be　decreased　to　12　h　at　1200　C　and　1　h　at　1550　C,　respectively.　This　kind　of　sintering　process　can　save　a　lot　of　energy　and　time　that　is　In　favor　of　the　industrial　production.　Under　this　sintering　process,　the　composition　dependent　dielectric　properties　of　(Ta2O5)(1-x)(TiO2)(x)　ceramics　have　been　studied　in　a　wide　range　of　composition　(0.01　＜=　x　＜=　0.20),　and　the　dielectric　constants　of　most　compositions　can　be　drastically　enhanced.　The　maximum　dielectric　value　can　reach　216　at　composition　x=0.04.　In　the　meantime,　the　mechanism　of　improvement　of　ceramic　dielectric　constants　sintered　at　1550　degrees　C　was　also　discussed.