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Author:

Zhu, Xin-Hong (Zhu, Xin-Hong.) | Chen, Guang-Hua (Chen, Guang-Hua.) | Zheng, Mao-Sheng (Zheng, Mao-Sheng.)

Indexed by:

EI Scopus SCIE

Abstract:

In this paper, aiming at the problems existed in the conventional MWECR CVD system using to prepare silicon-substrate thin films, such as lower microwave transform power, lower plasma density and higher photodegradation etc., the system was improved necessarily and efficiently, in which we focused on the studies for the microwave coupling structure, magnetic field structure and deposition system structure. The experimental results showed that the improved microwave coupling structure can produce high-microwave-transform efficiency of about 90%, the improved magnetic field structure can not only reduce the weight and volume of the conventional system but also obtain higher magnetic field strength which was two times that of the single coil magnetic field and useful to obtain higher plasma density on the sample holder, and the addition of the hot wire system can make the photodegradation decrease remarkably. In the result, the thin films prepared by using this improved system performed excellent properties, such as high photosensitivity of 1.54 x 10(5), high deposition rate of about 1 nm/s and low photodegradation, etc. (C) 2008 Elsevier B.V. All rights reserved.

Keyword:

high-microwave-transform efficiency excellent properties improved system high plasma density conventional MWECR CVD system

Author Community:

  • [ 1 ] [Zhu, Xin-Hong]NW Univ Xian, Dept Phys, Xian 710069, Peoples R China
  • [ 2 ] [Zheng, Mao-Sheng]NW Univ Xian, Dept Phys, Xian 710069, Peoples R China
  • [ 3 ] [Chen, Guang-Hua]Beijing Univ Technol, Dept Mat Sci & Engn, Beijing 100022, Peoples R China

Reprint Author's Address:

  • [Zhu, Xin-Hong]NW Univ Xian, Dept Phys, Xian 710069, Peoples R China

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Source :

SOLAR ENERGY MATERIALS AND SOLAR CELLS

ISSN: 0927-0248

Year: 2008

Issue: 10

Volume: 92

Page: 1183-1187

6 . 9 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 3

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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