• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
搜索

Author:

Ruan, Tianyu (Ruan, Tianyu.) | Qu, Minghao (Qu, Minghao.) | Qu, Xianlin (Qu, Xianlin.) | Ru, Xiaoning (Ru, Xiaoning.) | Wang, Jianqiang (Wang, Jianqiang.) | He, Yongcai (He, Yongcai.) | Zheng, Kun (Zheng, Kun.) (Scholars:郑坤) | Lin, Bo Heb Hongfeng (Lin, Bo Heb Hongfeng.) | Xu, Xixiang (Xu, Xixiang.) | Zhang, Yongzhe (Zhang, Yongzhe.) (Scholars:张永哲) | Yan, Hui (Yan, Hui.) (Scholars:严辉)

Indexed by:

EI Scopus SCIE

Abstract:

High hydrogen content (C-H) intrinsic amorphous silicon (a-Si:H) buffer layers were deposited on both sides of crystalline silicon wafers using plasma-enhanced chemical vapor deposition technique, which significantly improved surface passivation as well as conversion efficiency of the silicon heterojunction solar cells. Properties of the buffer layer and impact on the device performance were investigated. High resolution transmission electron microscope characterization shows that no obvious epitaxial growth occurred at the interface as long as a-Si:H buffer layer was introduced between c-Si and bulk intrinsic layer. Further study indicates that minority carrier lifetime of the device is related to hydrogen content of the buffer layer, reaching highest value up to 2050 ms at C-H of 33%. These findings evidently confirmed that suppression of epitaxial growth and thus improved passivation were realized by using high-hydrogen-content a-Si:H buffer layer, based on which a high efficiency solar cell was prepared with large area.

Keyword:

Author Community:

  • [ 1 ] [Ruan, Tianyu]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat,Educ Minist China, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 2 ] [Qu, Xianlin]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat,Educ Minist China, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 3 ] [Wang, Jianqiang]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat,Educ Minist China, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 4 ] [He, Yongcai]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat,Educ Minist China, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 5 ] [Zheng, Kun]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat,Educ Minist China, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 6 ] [Zhang, Yongzhe]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat,Educ Minist China, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 7 ] [Yan, Hui]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat,Educ Minist China, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 8 ] [Qu, Minghao]Hanergy Thin Film Power Grp Ltd, Chengdu R&D Ctr, Chengdu 610200, Sichuan, Peoples R China
  • [ 9 ] [Ru, Xiaoning]Hanergy Thin Film Power Grp Ltd, Chengdu R&D Ctr, Chengdu 610200, Sichuan, Peoples R China
  • [ 10 ] [Lin, Bo Heb Hongfeng]Hanergy Thin Film Power Grp Ltd, Chengdu R&D Ctr, Chengdu 610200, Sichuan, Peoples R China
  • [ 11 ] [Xu, Xixiang]Hanergy Thin Film Power Grp Ltd, Chengdu R&D Ctr, Chengdu 610200, Sichuan, Peoples R China

Reprint Author's Address:

  • 张永哲 严辉

    [Zhang, Yongzhe]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat,Educ Minist China, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China;;[Yan, Hui]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat,Educ Minist China, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China;;[Qu, Minghao]Hanergy Thin Film Power Grp Ltd, Chengdu R&D Ctr, Chengdu 610200, Sichuan, Peoples R China

Show more details

Related Keywords:

Related Article:

Source :

THIN SOLID FILMS

ISSN: 0040-6090

Year: 2020

Volume: 711

2 . 1 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:169

Cited Count:

WoS CC Cited Count: 10

SCOPUS Cited Count: 11

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

Online/Total:486/5479100
Address:BJUT Library(100 Pingleyuan,Chaoyang District,Beijing 100124, China Post Code:100124) Contact Us:010-67392185
Copyright:BJUT Library Technical Support:Beijing Aegean Software Co., Ltd.