Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process - 文章详情页

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摘要：

The　crystallization　of　Ge-Sb-Te　and　Si-Sb-Te　phase-change　materials　has　been　characterized　by　in　situ　time-dependent　resistance　measurement　and　transmission　electron　microscopy.　Although　silicon　has　various　properties　that　are　similar　to　those　of　germanium,　Si-Sb-Te　and　Ge-Sb-Te　crystallize　via　different　processes.　Si-Sb-Te　has　a　complex　structure　(mainly　hexagonal)　while　Ge-Sb-Te　has　a　simple　face-centered　cubic　structure　when　annealed　at　433　K　for　several　hours.　(c)　2008　Acta　Materialia　Inc.　Published　by　Elsevier　Ltd.　All　rights　reserved.

关键词：

phase-change memory SiSbTe GeSbTe phase-change material

作者机构：

[ 1 ] [Zhang, Ting]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
[ 2 ] [Song, Zhitang]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
[ 3 ] [Liu, Bo]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
[ 4 ] [Feng, Songlin]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
[ 5 ] [Cheng, Yan]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
[ 6 ] [Han, Xiaodong]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
[ 7 ] [Zhang, Ze]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100022, Peoples R China
[ 8 ] [Zhang, Ting]Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
[ 9 ] [Chen, Bomy]Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA

通讯作者信息：

[Zhang, Ting]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China

电子邮件地址：

tzhang@mail.sim.ac.cn

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