2　x　(FeNi/CoZnO)/ZnO/(CoZnO/Co)　x　2　spin-injection　devices　were　prepared　by　sputtering　and　photo-lithography.　In　the　devices,　two　composite　magnetic　layers　2　x　(FeNi/CoZnO)　and　(CoZnO/Co)　x　2　with　different　coercivities　were　used　to　fabricate　the　ZnO-based　semiconductor　spin　valve.　Since　the　CoZnO　ferromagnetic　semiconductor　layers　touched　the　ZnO　space　layer　directly,　the　significant　spin　injection　from　CoZnO　into　ZnO　was　observed　by　measuring　the　magnetoresistance　of　the　spin-injection　devices.　The　magnetoresistance　reduced　linearly　with　increasing　temperature,　from　1.12%　at　90　K　to　0.35%　at　room　temperature.