P-type　conductivity　of　polycrystalline　cubic　boron　nitride　(cBN)　films　was　achieved　by　implantation　of　beryllium　ions.　The　effects　of　implantation　doses　and　annealing　on　the　phase　composition　and　electrical　properties　of　cBN　films　were　studied.　A　reduction　in　resistivity　by　seven　orders　of　magnitude　was　observed.　Hall　measurement　revealed　a　corresponding　hole　concentration　of　6.1x10(18)　cm(-3)　and　mobility　of　3　cm(2)/V　s.　The　activation　energy　was　estimated　to　be　0.20　+/-　0.02　eV　from　the　temperature　dependence　of　resistance.　The　electrical　properties　of　Be-implanted　films　are　comparable　to　that　of　Be-doped　cBN　single　crystals　synthesized　by　high-pressure　and　high-temperature　method.　(c)　2008　American　Institute　of　Physics.