The　scalability　of　the　tunnel-regenerated　multi-active-region　(TRMAR)　structure　has　been　investigated　for　the　application　in　light-emitting　diodes　(LEDs).　The　use　of　the　TRMAR　structure　was　proved　theoretically　to　have　unique　advantages　over　conventional　single-active-layer　structures　in　virtually　every　aspect,　such　as　high　quantum　efficiency,　high　power　and　low　leakage.　Our　study　showed　that　the　TRMAR　LED　structure　could　obtain　high　output　power　under　low　current　injection　and　high　wall-plug　efficiency　compared　with　the　conventional　single-active-layer　LED　structure.