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Epitaxial Mg2Si(110) thin film has been obtained on Si(111) substrate by thermally enhanced solid-phase reaction of epitaxial Mg film with underlying Si substrate. An epitaxial orientation relationship of Si(111)parallel to Mg2Si(110) and Si ＜ 1 (1) over bar0 ＞parallel to Mg2Si ＜ 1 (1) over bar0 ＞ has been revealed by transmission electron microscopy. The formation of the unusual epitaxial orientation relationship is attributed to the strain relaxation of Mg2Si film in a MgO/Mg2Si/Si double heterostructure. (c) 2007 American Institute of Physics.
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