In　this　paper　a　novel　AlGaInP　thin-film　light-emitting　diode　(LED)　with　omni-directionally　reflector　(ODR)　and　transparent　conducting　indium　tin　oxide　(ITO)　n-type　contact　structure　is　proposed,　and　fabrication　process　is　developed.　This　reflector　is　realized　with　the　combination　of　a　low-refractive-index　dielectric　layer　and　a　high　reflectivity　metal　layer.　This　allows　the　light　emitted　or　internally　reflected　downwardly　towards　the　GaAs　substrate　at　any　angle　of　incidence　to　be　reflected　towards　the　top　surface　of　the　chip.　ITO　n-type　contact　is　used　for　anti-reflection　and　current　spreading　layers　on　the　ODR-LED　with　ITO.　The　sheet　resistance　of　the　ITO　films　(95　nm)　deposited　on　n-ohmic　contact　of　ODR-LED　is　of　the　order　23.5　Omega/square　with　up　to　90%　transmittance　(above　92%　for　590-770　nm)　in　the　visible　region　of　the　spectrum.　The　optical　and　electrical　characteristics　of　the　ODR-LED　with　ITO　are　presented　and　compared　to　conventional　AS-LED　and　ODR-LED　without　ITO.　It　is　shown　that　the　light　output　from　the　ODR-LED　with　ITO　at　forward　current　20mA　exceeds　that　of　AS-LED　and　ODR-LED　without　ITO　by　about　a　factor　of　1.63　and　0.16,　respectively.　A　favourable　luminous　intensity　of　218.3　mcd　from　the　ODR-LED　with　ITO　(peak　wavelength　620　nm)　could　be　obtained　under　20　mA　injection,　which　is　2.63　times　and　1.21　times　higher　than　that　of　AS-LED　and　ODR-LED　without　ITO,　respectively.