Enhanced performance of p-GaN by Mg delta doping - 文章详情页

作者：

Wang, Huaibing (Wang, Huaibing.) | Liu, Jianping (Liu, Jianping.) | Niu, Nanhui (Niu, Nanhui.) | Shen, Guangdi (Shen, Guangdi.) | Zhang, Shuming (Zhang, Shuming.)

收录：

EI Scopus SCIE

摘要：

The　electrical　and　structural　properties　of　Mg　delta-doped　GaN　epilayers　grown　by　MOCVD　were　investigated.　Compared　to　uniform　Mg-doping　GaN　layers,　it　has　been　shown　that　the　delta-doping　(delta-doping)　process　could　suppress　the　dislocation　density　and　enhance　the　p-type　performance.　The　influence　of　pre-purge　step　on　the　structural　properties　of　GaN　was　also　investigated.　The　hole　concentration　of　p-GaN　decreases　when　using　a　pre-purge　step.　These　results　can　be　explained　convincingly　using　a　simple　model　of　impurity　incorporation　under　Ga-free　growth　condition.　(C)　2007　Elsevier　B.V.　All　rights　reserved.

关键词：

delta doping GaN LED dislocation density hole concentration MOCVD

作者机构：

[ 1 ] Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China
[ 2 ] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[ 3 ] CAS, Suzhou Inst Nano Tech & Nano Bion, Suzhou 215123, Peoples R China

通讯作者信息：

[Wang, Huaibing]Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China

电子邮件地址：

wanghb328@gmail.com

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