A　novel　AlGaInP　thin-film　light　emitting　diode　(LED)　with　omni　directional　reflector　structure　was　proposed,　the　corresponding　fabrication　process　was　developed.　This　reflector　is　realized　by　the　combination　of　a　low-refractive-index　dielectric　layer　and　a　high　reflectivity　metal　layer.　The　AlGaInP　LED　layers　with　dielectric-metal　reflector　is　inverledly　bonded　to　the　GaAs　submount　by　using　80Au-20Sn　(wt%)　alloy　as　a　solder　(Reflector-Submount,　RS-LED),　and　then　GaAs　substrate　is　removed.　The　light　that　would　otherwise　be　absorbed　by　the　GaAs　substrate　is　reflected　by　the　high　reflectivity　dielectric-metal　reflector.　The　optical　and　electrical　characteristics　of　the　RS-LED　are　presented　and　compared　with　the　conventional　AlGaInP　absorbing　substrate　(AS)　LED　and　AlGaInP　absorbing　substrate　LED　with　distributed　Bragg　reflectors　(DBR).　A　great　improvement　in　the　brightness　and　efficiency　is　observed.　It　is　shown　that　the　light　output　and　lumen　efficiency　from　the　RS-LED　at　forward　current　20　mA　exceed　those　of　AS-LED　by　about　a　factor　of　2.2　and　1.2,　respectively,　and　similar　to　2　x　the　light　output　of　AS-LED　(DBR)　and　similar　to　1.5　x　the　lumen　efficiency　of　AS-LED　(DBR)　were　achieved.　194.3　mcd　luminous　intensity　from　the　RS-LED　(at　20　mA,　peak　wavelength　627　nm)　could　be　obtained　under　20　mA　injection,　which　is　2.8　and　1.6　times　higher　in　luminous　intensity　than　the　AS-LED　(at　20　mA,　peak　wavelength　624　nm)　and　AS-LED(DBR)　(at　20　mA,　peak　wavelength　623　nm),　respectively.