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作者:

Feng, L. F. (Feng, L. F..) | Wang, C. D. (Wang, C. D..) | Cong, H. X. (Cong, H. X..) | Zhu, C. Y. (Zhu, C. Y..) | Wang, Jun (Wang, Jun.) | Xie, X. S. (Xie, X. S..) | Lu, C. Z. (Lu, C. Z..) | Zhang, G. Y. (Zhang, G. Y..)

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EI Scopus SCIE

摘要:

Accurate forward electrical characteristics of multiquantum-well (MQW) lasers have been measured using ac admittance measurements together with dc I-V plot. The synchronous step offsets of apparent conductance, apparent capacitance, junction voltage, series resistance, and ideality factor at the onset of lasing were observed for the first time., With this effect, the lasing threshold can be deduced immediately by the LCR Meter. It is also found that the junction voltage jumps abruptly to a saturated value at the onset of lasing, and the starting and end points of jumping exactly correspond to the maximum of the second derivative of lasing power with respect to current and the kink point of the first derivative, respectively. All of the phenomena may help to verify and improve existing semiconductor laser models. In addition, negative capacitance effect in LDs was observed.

关键词:

ideality factor capacitance multiquantum-well (MQW) laser sudden change junction voltage series resistance negative capacitance (NC)

作者机构:

  • [ 1 ] Tianjin Univ, Dept Appl Phys, Tianjin 300072, Peoples R China
  • [ 2 ] Nankai Univ, Binhai Coll, Tianjin 300072, Peoples R China
  • [ 3 ] Foshan Univ, Dept Photoelect & Phys, Gangdong 528000, Peoples R China
  • [ 4 ] Beijing Nucl Instrument Factory, Beijing 100176, Peoples R China
  • [ 5 ] Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100022, Peoples R China
  • [ 6 ] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
  • [ 7 ] Peking Univ, Res Ctr Wideband Gap Semicond, Beijing 100871, Peoples R China

通讯作者信息:

  • [Feng, L. F.]Tianjin Univ, Dept Appl Phys, Tianjin 300072, Peoples R China

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来源 :

IEEE JOURNAL OF QUANTUM ELECTRONICS

ISSN: 0018-9197

年份: 2007

期: 5-6

卷: 43

页码: 458-461

2 . 5 0 0

JCR@2022

ESI学科: PHYSICS;

JCR分区:1

被引次数:

WoS核心集被引频次: 23

SCOPUS被引频次: 28

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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