This　investigation　describes　the　development　of　InGaN-GaN　light-emitting　diode　with　a　sidewall　reflector　for　increasing　the　light　output.　On　LED　sidewall,　the　Ag　film　and　the　SiO2　film　form　an　ornni-directional　sidewall　reflector.　The　sidewall　reflector　effectively　reflects　isotropic　photons,　and　significantly　enhances　the　probability　that　the　photons　emitted　in　the　near　horizontal　and　in-plane　directions　escape　outside　of　the　LED　from　the　substrate　surface　avoiding　the　light　absorption　by　the　n-contact,　n-pat　and　the　solders.　At　20　mA,　the　light　output　of　the　flip-chip　LEDs　with　sidewall　reflectors　is　10.9%　higher　than　the　conventional　flip-chip　LEDs　(CFC　LEDs).　(c)　2007　Elsevier　Ltd.　All　rights　reserved.