A　red-light　AlGaInP　light　emitting　diode　(LED)　is　fabricated　by　using　direct　Wafer　bonding　technology.　Taking　N-GaN　wafer　as　the　transparent　substrate,　the　red-light　LED　is　flip-chiped　onto　a　structured　silicon　submount.　Electronic　luminance　(EL)　test　reveals　that　the　luminance　flux　is　130%　higher　than　that　of　the　conventional　LED　made　from　the　same　LED　wafer.　Current-voltage　(I-V)　measurement　indicates　that　the　bonding　processes　do　not　impact　the　electrical　property　of　AlGaInP　LED　in　the　small　voltage　region　(V　＜　1.5　V).　In　the　large　voltage　region　(V　＞　1.5　V),　the　I-V　characteristic　exhibits　space-charge-limited　currents　characteristic　due　to　the　p-GaAs/n-GaN　bonding　interface.