On　the　basis　of　the　proximity　gettering　of　platinum　by　vacancy　defects　which　are　induced　by　proton　irradiation,　local　platinum　doping　is　realized.　This　method　is　used　as　a　local　lifetime　control　technology　for　high-power　diodes.　The　theoretical　dependence　of　electrically　active　Pt　concentration　C-Pts　on　the　concentration　of　irradiation-induced　defects　C-V,　is　also　studied.　The　diodes＇　reverse　performance　parameters　are　measured.　At　low　proton　irradiation　doses,　the　quantities　of　platinum　gettered　by　irradiation-induced　defects　are　enhanced　when　the　irradiation　dose　increases.　This　can　improve　the　device＇s　performance.　When　the　proton　irradiation　dose　is　high　enough,　the　peak　concentration　of　gettered　platinum　tends　to　saturate.　This　is　consistent　with　the　theoretical　result.