GaN-based　light-emitting　diodes　(LEDs)　with　mesh-contact　electrodes　have　been　developed.　The　p-type　ohmic　contact　layer　is　composed　of　oxidized　Ni/Au　mesh　and　NiO　overlay　(20　angstrom).　An　Ag　(3000　angstrom)　onmi-directional　reflector　covers　the　p-type　contact.　The　n-type　contact　is　a　Ti/Al　planar　film　with　a　10-mu　m-width　Ti/Al　stripe.　The　Ti/Al　stripe　surrounds　the　centre　of　LED　mesa.　With　a　20-mA　current　injection,　the　light　output　power　of　GaN-based　LEDs　with　mesh-contact　electrodes　is　23%　higher　than　that　of　the　conventional　LEDs.