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摘要:
A method to determine the growth polarity of GaN/AlGaN multi-quantum wells (MQWs) has been proposed. Electron holography (EH) study of the potential profiles of the multi-quantum well structure has been used here to determine the direction of build-in electric field that is strictly related to the growth polarity.
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来源 :
ACTA PHYSICA SINICA
ISSN: 1000-3290
年份: 2006
期: 11
卷: 55
页码: 5829-5834
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JCR@2022
ESI学科: PHYSICS;
JCR分区:2
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