Hydrogenated　microcrystalline　silicon　(mu　c-Si:H)　films　with　high　crystalline　volume　fraction　were　deposited　using　a　novel　hot　wire　assisted　microwave　electron　cyclotron　resonance-chemical　vapor　deposition　(HW-MWECR-CVD)　system.　The　Raman　scattering　spectrum　and　X-ray　diffraction　measurements　were　carried　out　to　characterize　the　microstructure　of　the　films.　It　was　shown　that,　in　a　wide　range　of　silane　dilution　ratio,　all　the　deposited　films　had　high　crystalline　volume　fractions.　The　transition　phase　from　amorphous　to　microcrystalline　silicon　was　more　easily　grown　with　higher　silane　dilution　ratio,　which　was　attributed　to　the　higher　ionization　and　decomposition　of　the　source　gases　in　HW-MWECR-CVD　system　than　in　other　systems.