收录:
摘要:
Influences of residual stress on mechanical properties of boron-doped silicon diaphragms are analyzed. Considering the residual stress, the total stress analytical solutions for square-shaped boron-doped silicon diaphragms with small deflection and large deflection are presented. It is found that the residual stress should not be neglected in calculation of the total stress for diaphragms with large ratio of edge length to thickness. The load limitation P-max of the square-shaped boron-doped silicon diaphragms is calculated based on the total stress analytical solution and the Griffith fracture criterion. The results agree well with the reported experiments. Many micro-etchholes were found on the surface of boron-doped silicon diaphragm made from wet etch process, and these holes cause great degradation of the load limitation P-max compared with perfect crystal silicon diaphragms. (C) 2006 Elsevier Ltd. All rights reserved.
关键词:
通讯作者信息:
电子邮件地址:
来源 :
SOLID-STATE ELECTRONICS
ISSN: 0038-1101
年份: 2006
期: 9-10
卷: 50
页码: 1579-1583
1 . 7 0 0
JCR@2022
ESI学科: PHYSICS;
JCR分区:2