High　brightness　GaN-based　light-emitting　diodes(LEDs)　with　stripe-contact　electrodes　have　been　developed.　The　p-type　Ohmic　contact　layer　is　composed　of　oxidized　Ni/Au　stripes　and　NiO　stripes.　A　Ag　(3000　A)　omnidirectional　reflector　covers　the　p-type　contact.　The　n-type　contact　is　a　Ti/Al　planar　film　with　a　Ti/Al　stripe.　All　Ni/Au,　NiO,　and　Ti/Al　stripes　surround　the　center　of　the　LED　mesa.　At　20　mA　current　operation,　the　light　output　power　of　GaN-based　LEDs　with　the　stripe-contact　electrodes　is　16.26%-35.37%　higher　than　that　of　the　conventional　LEDs.