In　recent　years,　perovskite　solar　cells　with　low　cost　and　high　efficiency　are　developing　rapidly.　In　view　of　the　potential　commercialization　of　perovskite　solar　cells,　it　is　very　important　to　upgrade　its　functional　layer.　ZnSnO　(ZTO)　has　the　advantages　of　high　transmittance,　so　it　is　often　used　as　the　electron　transport　layer　of　solar　cells.　Oxygen　vacancies　in　ZTO　not　only　plays　the　role　of　carrier,　but　also　is　the　main　defect　in　ZTO.　So　we　study　the　impact　of　oxygen　vacancies　in　ZTO　to　solar　cells　by　preparing　ZTO　solar　cells　with　different　Si　doping　concentrations.　In　this　work,　the　amorphous　metal　oxide　films　Si-ZnSnO　(SZTO)　with　different　Si　concentrations　were　prepared　by　RF　magnetron　sputtering.　The　XPS　results　indicate　that　the　oxygen　vacancies　density　in　SZTO　can　be　significantly　reduced　by　Si　doping.　The　carrier　dynamics　studies　found　that　the　electronic　extraction　and　transfer　ability　of　perovskite　solar　cell　can　be　also　improved　with　the　reduction　of　oxygen　vacancies　in　SZTO.　With　an　improved　electron　transfer　layer,　the　perovskite　solar　cell　has　a　maximum　photoelectric　conversion　efficiency　of　13.4%,　an　open　circuit　voltage　of　1.04　V　and　a　short　circuit　current　of　21.6　mAcm(-2).　Filling　factor　is　0.67.　(C)　2020　Elsevier　B.V.　All　rights　reserved.