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Author:

Ding, Y (Ding, Y.) | Liu, GH (Liu, GH.) | Chen, GH (Chen, GH.) | He, DY (He, DY.) (Scholars:贺定勇) | Zhu, XH (Zhu, XH.) | Zhang, WL (Zhang, WL.) | He, B (He, B.) | Zhang, XK (Zhang, XK.) | Tian, L (Tian, L.) | Ma, ZJ (Ma, ZJ.)

Indexed by:

EI Scopus SCIE CSCD

Abstract:

The method of numerical simulation is used to fit the relationship between the photoconductivity in films and the illumination time. The generation and process rule of kinds of different charged defect states during illumination are revealed. It is found surprisingly that the initial photoconductivity determines directly the total account of photoconductivity degradation of sample.

Keyword:

Staebler-Wronski effect microwave electron cyclotron resonant chemical vapour deposition charged defects hydrogenated amorphous silicon

Author Community:

  • [ 1 ] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
  • [ 2 ] Beijing Univ Technol, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100022, Peoples R China

Reprint Author's Address:

  • [Ding, Y]Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

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Source :

CHINESE PHYSICS

ISSN: 1009-1963

Year: 2006

Issue: 4

Volume: 15

Page: 813-817

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 2

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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