The　p-type　GaN(p-GaN)　samples　grown　at　low　temperature　870-980　degrees　C　on　sapphire　substrate　were　prepared　by　the　metal　organic　chemical　vapor　deposition　technique(MOCVD),　and　their　electrical　properties　were　investigated.　The　p-GaN　samples　grown　below　900　degrees　C　show　high-resistivity,　and　samples　grown　at　above　900　degrees　C　have　good　conductivity.　In　addition,　the　electrical　properties　are　also　related　with　the　doping　level　and　the　growth　condition　of　p-GaN.　The　low　N-Ga　mole　ratio　leads　to　poor　conductivity,　the　high　ratio　leads　to　rough　morphology.　At　last,　we　use　the　optimized　p-GaN　to　fabricate　the　green-light　emitting　diodes.　We　found　that　when　the　growth　temperature　is　lower,　the　luminescence　intensity　and　reverse　voltage　is　higher　but　the　forward　voltage　increases　slightly.