1D　memristors　with　nonvolatile　memristive　characteristics　have　large　potential　in　brain-like　neuromorphic　computation　and　digital　logic　circuits.　Herein,　a　novel　memristive　device　based　on　wrinkled　MoS(2)wrapped　GaN　nanowires　(NWs)　with　a　spray-coated　Ag　NWs　network　top　electrode　is　described.　The　memristive　device　shows　good　stability/durability　and　retention　characteristics　for　798　cycles　and　3.4　x　10(3)s,　respectively,　together　with　low　switching　voltages.　A　memristive　model　based　on　filament　formation/rupture　in　the　wrinkled　surface　of　the　NWs　is　proposed　by　analyzing　the　conductive　characteristics　and　surface　structure.　Bipolar　resistive　switching　is　governed　by　the　electric　field　associated　with　the　wrinkled　structure　giving　rise　to　migration　of　oxygen　ions　along　the　wrinkled　surface　of　the　NWs.　The　results　enrich　the　knowledge　pertaining　to　the　design　and　optimization　of　memristors　composed　of　NWs　and　also　provide　insights　into　the　memristive　behavior　of　memristors　composed　of　1D　materials.