Concepts　and　techniques　of　response　surface　methodology　have　been　widely　applied　in　many　branches　of　engineering,　especially　in　the　chemical　and　manufacturing　areas.　This　paper　presents　an　application　of　the　methodology　in　a　magnetic　crystal　Czochralski　growth　system　for　single　crystal　silicon　to　optimize　the　oxygen　concentration　at　the　crystal　growth　interface　in　a　cusp　magnetic　field.　The　simulation　demonstrates　that　the　response　surface　methodology　is　a　feasible　algorithm　for　the　optimization　of　the　Czochralski　crystal　growth　process.