Simulations　of　heat　transfer　and　oxygen　transport　during　a　Czochralski　growth　of　silicon　with　and　without　a　cusp　magnetic　field　were　carried　out.　A　finite　volume　method　with　a　low-Reynolds　number　K-epsilon　model　proposed　by　Jones-Launder　was　employed.　The　numerical　results　were　compared　with　the　experimental　data　in　the　literature.　It　is　found　that　the　calculated　results　are　in　good　agreement　with　the　experimental　data.