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作者:

Zhu, XH (Zhu, XH.) | Chen, GH (Chen, GH.) | Zhang, WL (Zhang, WL.) | Ding, Y (Ding, Y.) | Ma, ZJ (Ma, ZJ.) | Hu, YH (Hu, YH.) | He, B (He, B.) | Rong, YD (Rong, YD.)

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摘要:

Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (similar to 10(5)) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour deposition system under the different deposition conditions. It was proposed that there was no direct correlation between the photosensitivity and the hydrogen content (C-H) as well as H-Si bonding configurations, but for the stability, they were the critical factors. The experimental results indicated that higher substrate temperature, hydrogen dilution ratio and lower deposition rate played an important role in improving the microstructure of a-Si:H films. We used hydrogen elimination model to explain our experimental results.

关键词:

hydrogenated amorphous silicon (a-Si : H) films hydrogen elimination (HE) model microstructure photosensitivity stability

作者机构:

  • [ 1 ] Beijing Univ Technol, Dept Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 2 ] Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China

通讯作者信息:

  • [Chen, GH]Beijing Univ Technol, Dept Mat Sci & Engn, Beijing 100022, Peoples R China

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来源 :

CHINESE PHYSICS

ISSN: 1009-1963

年份: 2005

期: 11

卷: 14

页码: 2348-2351

JCR分区:2

被引次数:

WoS核心集被引频次: 6

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