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Author:

Zhu, XH (Zhu, XH.) | Chen, GH (Chen, GH.) | Zhang, WL (Zhang, WL.) | Ding, Y (Ding, Y.) | Ma, ZJ (Ma, ZJ.) | Hu, YH (Hu, YH.) | He, B (He, B.) | Rong, YD (Rong, YD.)

Indexed by:

EI Scopus SCIE CSCD

Abstract:

Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (similar to 10(5)) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour deposition system under the different deposition conditions. It was proposed that there was no direct correlation between the photosensitivity and the hydrogen content (C-H) as well as H-Si bonding configurations, but for the stability, they were the critical factors. The experimental results indicated that higher substrate temperature, hydrogen dilution ratio and lower deposition rate played an important role in improving the microstructure of a-Si:H films. We used hydrogen elimination model to explain our experimental results.

Keyword:

stability hydrogen elimination (HE) model microstructure hydrogenated amorphous silicon (a-Si : H) films photosensitivity

Author Community:

  • [ 1 ] Beijing Univ Technol, Dept Mat Sci & Engn, Beijing 100022, Peoples R China
  • [ 2 ] Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China

Reprint Author's Address:

  • [Chen, GH]Beijing Univ Technol, Dept Mat Sci & Engn, Beijing 100022, Peoples R China

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Source :

CHINESE PHYSICS

ISSN: 1009-1963

Year: 2005

Issue: 11

Volume: 14

Page: 2348-2351

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 6

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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