ZnO　nanowires　were　synthesized　by　chemical　vapour　deposition　(CVD).　The　dc　electrical　conductivity　of　a　single　ZnO　nanowire　was　investigated　over　a　wide　temperature　range　from　300　to　6　K.　It　is　found　that　the　rho　similar　to　T-1/2　temperature　dependence　of　conductivity　follows　the　relation　In　p　similar　to　T-1/2.　The　conductivity　data　suggest　that　the　dominant　conduction　mechanism　is　Efros-Shklovskii　variable-range　hopping　conduction.　The　strong　electron-electron　interaction　in　the　nanowire　is　also　proved　by　the　I-V　and　dI/dV　curves,　on　which　there　emerges　a　Coulomb　gap-like　structure　at　low　temperatures.