We　report　on　the　growth　and　properties　of　a-SM　films　using　a　combination　of　the　hot　wire　and　microwave　ECR　CVD　growth　techniques.　The　films　were　prepared　using　W　filaments.　Films　were　grown　at　powers　from　175　to　500　W,　and　the　corresponding　optical　and　electronic　properties　of　the　films　were　measured.　The　temperature　of　the　substrate　was　varied　between　similar　to　200　and　230　degrees　C.　It　was　discovered　in　the　current　research　that　the　hot　wire　could　significantly　increase　the　growth　rate,　about　30　angstrom/s.　The　H　bonding　and　electronic　properties　were　found　to　be　dependent　critically　upon　the　growth　rate　and　the　substrate　temperature.　In　such　a　system,　the　hot　wire　plays　an　important　role　in　perfecting　the　microstructure　as　well　as　improving　the　stability　and　the　optoelectronic　properties　of　a-Si:H　films.　The　experimental　results　indicate　that　the　decrease　in　hydrogen　content　in　the　microstructure　of　a-SM　films　was　the　primary　reason　for　the　improvement　of　the　stability　and　the　optoelectronic　properties　of　a-Si:H　films.　(c)　2004　Elsevier　B.V.　All　rights　reserved.