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作者:

Wang, BB (Wang, BB.) | Lee, S (Lee, S.) | Wang, WL (Wang, WL.) | Liao, KJ (Liao, KJ.) | Yan, H (Yan, H.)

收录:

CPCI-S Scopus SCIE

摘要:

Carbon nanotips were grown on a silicon substrate by negative bias-enhanced hot filament chemical vapor deposition without catalyst, using a mixture of methane, ammonia and hydrogen as the reaction gases. It was evidenced that the plasma caused by the bias played a key role in the formation of the carbon nanotips. Due to occurrence of plasma during growing carbon nanotips, the gases were ionized into various ions. Based on different effects of the ions, a growth mechanism of the carbon nanotips was put forward.

关键词:

carbon nanotips etching negative bias

作者机构:

  • [ 1 ] Beijing Univ Technol, Coll Appl Math & Phys, Beijing 100022, Peoples R China
  • [ 2 ] Beijing Univ Technol, Quantum Mat Lab, Beijing 100022, Peoples R China
  • [ 3 ] Ajou Univ, Dept Mol Sci & Technol, Suwon 442749, South Korea
  • [ 4 ] Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China

通讯作者信息:

  • [Wang, BB]Beijing Univ Technol, Coll Appl Math & Phys, Beijing 100022, Peoples R China

电子邮件地址:

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来源 :

INTERNATIONAL JOURNAL OF MODERN PHYSICS B

ISSN: 0217-9792

年份: 2005

期: 1-3

卷: 19

页码: 647-650

1 . 7 0 0

JCR@2022

ESI学科: PHYSICS;

JCR分区:4

被引次数:

WoS核心集被引频次: 1

SCOPUS被引频次:

ESI高被引论文在榜: 0 展开所有

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