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Author:

Zhang, BY (Zhang, BY.) | Li, G (Li, G.) (Scholars:李港) | Chen, M (Chen, M.) | Yu, HJ (Yu, HJ.) (Scholars:尉海军) | Wang, YG (Wang, YG.) | Ma, XY (Ma, XY.)

Indexed by:

EI Scopus SCIE

Abstract:

Passive mode locking of a diode-pumped Nd:GdVO4 laser was demonstrated using In0.25Ga0.75As as saturable absorber as well as output coupler. The pulse width was measured to be about 16 ps with a repetition rate of 146 MHz. The average output power was 120 mW with pump power of 6 W. To our knowledge, this is the first demonstration on a passively mode-locked Nd:GdVO4 laser by using an In0.25Ga0.75As output coupler. (C) 2004 Elsevier B.V. All rights reserved.

Keyword:

diode-end-pumped Nd : GdVO4 mode locking In0.25Ga0.75As

Author Community:

  • [ 1 ] Beijing Univ Technol, Coll Laser Engn, Beijing 100022, Peoples R China
  • [ 2 ] Liaocheng Univ, Coll Phys Sci & Informat Engn, Liaocheng 252059, Peoples R China
  • [ 3 ] Beijing Univ Technol, Coll Laser Engn, Beijing 100022, Peoples R China
  • [ 4 ] Chinese Acad Sci, Inst Semicond, Beijing 100081, Peoples R China

Reprint Author's Address:

  • [Zhang, BY]Beijing Univ Technol, Coll Laser Engn, Beijing 100022, Peoples R China

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Source :

OPTICS COMMUNICATIONS

ISSN: 0030-4018

Year: 2005

Issue: 1-6

Volume: 244

Page: 311-314

2 . 4 0 0

JCR@2022

ESI Discipline: PHYSICS;

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 5

SCOPUS Cited Count: 7

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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