英文标题
The Simulated Model of IGBT Circuit and its Behavior Simulation
英文摘要
Based on the existing built-in models of PSPICE, by using the composite models methodes, the authors present with a composite insulated gate bipolar transister model. The comparison between simulation resuits and experiment results of the factory shows complete agreement in dynamic and static state bebaviours of the IGBT.
获取号
WF:perioarticalhbkjdx200101004
