Multipeak　characteristics　of　field　emission　energy　distribution　(FEED)　from　semiconductor　films　has　been　investigated　theoretically.　It　is　shown　that　for　wide　bandgap　semiconductors　with　low　or　negative　electron　affinity,　the　appearance　of　FEED　multipeaks　is　inevitable　when　a　high　electric　field　is　applied,　and　the　extra　peaks　will　become　pronounced　while　the　peak　positions　shift　toward　the　lower　energy　side　with　increasing　field,　which　agrees　well　with　experimental　observations.　It　is　also　found　that　the　number,　strength,　and　position　of　FEED　peaks　are　strongly　dependent　on　factors　such　as　field　intensity,　electron　affinity,　and　doping　levels.　Resonant　electron　tunneling　is　suggested　as　an　appropriate　model　to　describe　the　FEED　multipeak　characteristics　observed.