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作者:

Xu, QY (Xu, QY.) | Wang, Y (Wang, Y.) | Du, XL (Du, XL.) (学者:杜修力) | Xue, QK (Xue, QK.) | Zhang, Z (Zhang, Z.)

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摘要:

The polarity of the ZnO film grown on sapphire using an ultrathin Ga wetting layer has been investigated by electron holography. Spontaneous polarization of the ZnO film leads to localized charges in the surface, which change the potential distribution in the vacuum side of the film. The potential distribution depends on the nature of the bounded charges and change as a function of the distance from the film surface. By studying the dependence of the potential change on the distance from the film surface, the ZnO film with very thin Ga wetting layer is determined to have the [0001] polarity. (C) 2004 American Institute of Physics.

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作者机构:

  • [ 1 ] Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, Beijing 100080, Peoples R China
  • [ 2 ] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
  • [ 3 ] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
  • [ 4 ] Beijing Univ Technol, Beijing 100022, Peoples R China

通讯作者信息:

  • [Xu, QY]Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, POB 603, Beijing 100080, Peoples R China

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来源 :

APPLIED PHYSICS LETTERS

ISSN: 0003-6951

年份: 2004

期: 12

卷: 84

页码: 2067-2069

4 . 0 0 0

JCR@2022

ESI学科: PHYSICS;

JCR分区:1

被引次数:

WoS核心集被引频次: 26

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