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Author:

Chen, GH (Chen, GH.) | Cai, RQ (Cai, RQ.) | Song, XM (Song, XM.) | Deng, JX (Deng, JX.) (Scholars:邓金祥)

Indexed by:

EI Scopus SCIE

Abstract:

In this paper, the preparation of discontinuous microcrystalline diamond with special structure, deposited on a porous silicon (PS) substrate by microwave chemical vapor deposition (MW-CVD) technology was reported, and the field electron emission of the diamonds were studied. Our experimental results indicated that the diamonds have a lower field emission threshold voltage (<0.8V/mum) and a higher field emission current density (>17.5A/cm(2)). A preliminary explanation of this special field electron emission was given in our paper. (C) 2003 Elsevier B.V. All rights reserved.

Keyword:

field electron emission porous silicon diamond films MW-CVD

Author Community:

  • [ 1 ] Beijing Univ Technol, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100022, Peoples R China
  • [ 2 ] Coll Phys Sci & Technol, Lanzhou 730000, Peoples R China

Reprint Author's Address:

  • [Chen, GH]Beijing Univ Technol, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100022, Peoples R China

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Source :

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

ISSN: 0921-5107

Year: 2004

Issue: 2

Volume: 107

Page: 233-236

3 . 6 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 8

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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