Preparation and field electron emission of microcrystalline diamond deposited on a porous silicon substrate - 文章详情页

作者：

Chen, GH (Chen, GH.) | Cai, RQ (Cai, RQ.) | Song, XM (Song, XM.) | Deng, JX (Deng, JX.) (学者：邓金祥)

收录：

EI Scopus SCIE

摘要：

In　this　paper,　the　preparation　of　discontinuous　microcrystalline　diamond　with　special　structure,　deposited　on　a　porous　silicon　(PS)　substrate　by　microwave　chemical　vapor　deposition　(MW-CVD)　technology　was　reported,　and　the　field　electron　emission　of　the　diamonds　were　studied.　Our　experimental　results　indicated　that　the　diamonds　have　a　lower　field　emission　threshold　voltage　(＜0.8V/mum)　and　a　higher　field　emission　current　density　(＞17.5A/cm(2)).　A　preliminary　explanation　of　this　special　field　electron　emission　was　given　in　our　paper.　(C)　2003　Elsevier　B.V.　All　rights　reserved.

关键词：

field electron emission porous silicon diamond films MW-CVD

作者机构：

[ 1 ] Beijing Univ Technol, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100022, Peoples R China
[ 2 ] Coll Phys Sci & Technol, Lanzhou 730000, Peoples R China

通讯作者信息：

[Chen, GH]Beijing Univ Technol, Minist Educ China, Key Lab Adv Funct Mat, Beijing 100022, Peoples R China

电子邮件地址：

ghchen@bjpu.edu.cn

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