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作者:

Huang, AP (Huang, AP.) | Wang, GJ (Wang, GJ.) | Xu, SL (Xu, SL.) | Zhu, MK (Zhu, MK.) | Li, GH (Li, GH.) | Wang, B (Wang, B.) (学者:王波) | Yan, H (Yan, H.)

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EI Scopus SCIE

摘要:

In this paper, aluminum nitride (AIN) films have been successfully synthesized by taking solid AlCl3 as the source of atomic aluminum, with negative bias assisted catalytic chemical vapor deposition (Cat-CVD) on Si(1 0 0) substrate at low temperatures. Nitrogen (N-2) and hydrogen (H-2) were used as gas precursors. The results show that by using AlCl3 as the aluminum source AIN films with preferential orientation can be obtained under negative bias assistance by Cat-CVD. The effects of the bias during the deposition process are discussed in details. (C) 2003 Elsevier B.V. All rights reserved.

关键词:

AlN substrate bias Cat-CVD orientation

作者机构:

  • [ 1 ] Beijing Univ Technol, Quantum Mat Lab, Beijing 100022, Peoples R China
  • [ 2 ] Liaocheng Univ, Coll Phys Sci & Informat Engn, Liaocheng 252059, Peoples R China

通讯作者信息:

  • 王波

    [Wang, B]Beijing Univ Technol, Quantum Mat Lab, Beijing 100022, Peoples R China

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来源 :

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY

ISSN: 0921-5107

年份: 2004

期: 2

卷: 107

页码: 161-165

3 . 6 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

JCR分区:2

被引次数:

WoS核心集被引频次: 11

SCOPUS被引频次: 14

ESI高被引论文在榜: 0 展开所有

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