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摘要:
In this paper, aluminum nitride (AIN) films have been successfully synthesized by taking solid AlCl3 as the source of atomic aluminum, with negative bias assisted catalytic chemical vapor deposition (Cat-CVD) on Si(1 0 0) substrate at low temperatures. Nitrogen (N-2) and hydrogen (H-2) were used as gas precursors. The results show that by using AlCl3 as the aluminum source AIN films with preferential orientation can be obtained under negative bias assistance by Cat-CVD. The effects of the bias during the deposition process are discussed in details. (C) 2003 Elsevier B.V. All rights reserved.
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来源 :
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN: 0921-5107
年份: 2004
期: 2
卷: 107
页码: 161-165
3 . 6 0 0
JCR@2022
ESI学科: MATERIALS SCIENCE;
JCR分区:2