Oriented　thin　films　of　manganese　sulfide　(MnS)　have　been　deposited　by　a　simple　chemical　bath　deposition　(CBD)　method,　which　was　a　soft　solution-processing　route　for　preparation　of　semiconductor　thin　films.　By　varying　deposition　conditions　(e.g.　bath　temperature,　concentration　ratio　of　Mn2+　ions　to　CH3-CS-NH2　and　concentration　ratio　of　Mn2+　ions　to　C6H5Na3O7),　the　effects　of　synthetic　conditions　on　the　properties　of　films　were　investigated.　On　the　basis　of　experimental　results,　the　synthetic　conditions　were　optimized.　The　crystallinity　and　orientation　of　films　were　characterized　by　X-ray　diffraction　(XRD)　and　scanning　electron　microscopy　(SEM).　Using　the　optical　absorption　data,　the　optical　band　gap　for　the　MnS　films　was　determined　to　be　3.23　eV.